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cmos linear image sensors current-output type sensors with variable integration time function www.hamamatsu.com s10111 to s10114 series 1 the s10111 to s10114 series are self-scanning photodiode arrays designed speci ? cally as detectors for spectroscopy. the scan- ning circuit operates at low power consumption and is easy to handle. each photodiode has a large active area with high uv sen- sitivity. large saturation output charge high uv sensitivity absolute maximum ratings shape speci ? cations parameter symbol condition value unit supply voltage vdd ta=25 c -0.3 to +6 v clock pulse voltage v(clk) ta=25 c -0.3 to +6 v start pulse voltage v(st) ta=25 c -0.3 to +6 v integration time control pulse v(int) ta=25 c -0.3 to +6 v over ow gate voltage vofg ta=25 c -0.3 to +6 v over ow drain voltage vofd ta=25 c -0.3 to +6 v operating temperature * 1 topr -5 to +65 c storage temperature * 1 tstg -10 to +85 c * 1: no condensation type no. number of pixels pixel pitch ( ? m) pixel height (mm) package window material weight (g) s10111-128q 128 50 2.5 ceramic quartz (t=0.5 mm) 3.0 s10111-256q 256 s10111-512q 512 3.5 s10112-128q 128 0.5 3.0 s10112-256q 256 s10112-512q 512 3.5 S10113-256q 256 25 0.5 3.0 S10113-512q 512 S10113-1024q 1024 3.5 s10114-256q 256 2.5 3.0 s10114-512q 512 s10114-1024q 1024 3.5 features applications variable integration time for each pixel spectrophotometry wide active area pixel pitch: 50 ? m, 25 ? m pixel height: 2.5 mm, 0.5 mm www.datasheet.net/ datasheet pdf - http://www..co.kr/
cmos linear image sensors s10111 to s10114 series 2 recommended terminal voltage (ta=25 c) electrical characteristics [ta=25 c, vdd=5 v, vb=vofd=2 v, vofg=0.2 v] parameter symbol min. typ. max. unit supply voltage vdd 4.75 5 5.25 v clock pulse voltage high level v(clk) vdd - 0.25 vdd vdd + 0.25 v low level 0 - 0.4 start pulse voltage high level v(st) vdd - 0.25 vdd vdd + 0.25 v low level 0 - 0.4 integration time control pulse voltage high level v(int) vdd - 0.25 vdd vdd + 0.25 v low level 0 - 0.4 over ow drain voltage vofd 0.5 2 2.5 v over ow gate voltage vofg 0.17 0.2 0.23 v parameter symbol min. typ. max. unit clock pulse frequency s10111/s10114 series f(clk) 10 k - 250 k hz s10112/S10113 series 10 k - 500 k video data rate vr - f(clk) - hz power consumption * 2 s10111-128q p -0.75- mw s10111-256q - 1.75 - s10111-512q - 4.25 - s10112-128q - 1.5 - s10112-256q - 3.5 - s10112-512q - 8.25 - S10113-256q - 3.25 - S10113-512q - 7.25 - S10113-1024q - 18.25 - s10114-256q - 1.75 - s10114-512q - 3.75 - s10114-1024q - 8.25 - video line capacitance (vb=2 v) s10111/s10112-128q cv -10- pf s10111/s10112-256q - 14 - s10111/s10112-512q - 22 - S10113/s10114-256q - 13 - S10113/s10114-512q - 19 - S10113/s10114-1024q - 32 - * 2: f(clk)=250 khz (s10111/s10114 series), 500 khz (s10112/S10113 series) www.datasheet.net/ datasheet pdf - http://www..co.kr/
cmos linear image sensors s10111 to s10114 series 3 spectral response (typical example) kmpdb0250ed electrical and optical characteristics [ta=25 c, vdd=5 v, vb=vofd=2 v, vofg=0.2 v, f(clk)=200 khz] parameter symbol min. typ. max. unit spectral response range o 200 - 1000 nm peak sensitivity wavelength o p - 750 - nm dark current s10111 series i d -0.20.6 pa s10112 series - 0.04 0.12 S10113 series - 0.04 0.12 s10114 series - 0.2 0.6 saturation output charge s10111 series qsat 110 140 - pc s10112 series 22 28 - S10113 series 11 14 - s10114 series 55 70 - saturation exposure * 3 esat 580 m lx s photo response non-uniformity * 3 * 4 * 5 prnu - - 3 % * 3: measured with a tungsten lamp of 2856 k * 4: photo response non-uniformity is de ? ned under the condition that the device is uniformly illuminated by light which is 50 % of the saturation exposure level as follows: prnu= ' x/x 100 (%) x: the average output of all pixels, ' x: difference between x and maximum or minimum output. * 5: except for the ? rst and last pixels 200 600 1000 300 400 800 700 1100 500 900 1200 wavelength (nm) photo sensitivity (ma/w) (ta=25 c) 200 300 0 400 100 www.datasheet.net/ datasheet pdf - http://www..co.kr/
cmos linear image sensors s10111 to s10114 series 4 equivalent circuit kmpdc0279eb block diagram kmpdc0232ec clk st int vdd eos active video dummy video gnd vofd vofg shift register address switch array photodiode array overflow drain clk st eos active video int dq cq dq cq dq cq dq cq dummy video 1st pixel 2nd pixel last pixel www.datasheet.net/ datasheet pdf - http://www..co.kr/
cmos linear image sensors s10111 to s10114 series timing chart kmpdc0249ed parameter symbol min. typ. max. unit start pulse (st) interval s1011 * -128 tpi(st) 130/f(clk) - - s s1011 * -256 258/f(clk) - - s1011 * -512 514/f(clk) - - s1011 * -1024 1026/f(clk) - - int pulse rise and fall times tr(int), tf(int) 0 20 30 ns int pulse - clock pulse timing t(int-clk) 30 - 1 / [2 f(clk)] ns clock pulse - int pulse timing t(clk-int) 30 - 1 / [2 f(clk)] ns start pulse rise and fall times tf(st), tr(st) 0 20 30 ns clock pulse duty ratio - 40 50 60 % clock pulse rise and fall times tf(clk), tr(clk) 0 20 30 ns clock pulse - start pulse timing t(clk-st) 20 - - ns start pulse - clock pulse timing t(st-clk) 20 - - ns 5 tf(clk) allow clk pulse transition from high to low only one time while st pulse is high. integration time is determined by the interval between start pulses. only the switching noise component is output from the dummy video line. do not use the dummy video output during integration readout. the int signal is not needed between eos and the rising edge of the next st signal. tpi(st), integration time clk active video (available term) eos 1st 1st 2nd 3rd 4th 5th 2nd 3rd last pixel tr(clk) clk st int int tf(st) tr(st) t(st-clk) t(clk-st) active video (available term) st 1/f(clk) t(int-clk) tr(int) t(clk-int) tf(int) int should be "high" when not reading pixels. enlarged view 4th 1st 2nd 3rd 4th www.datasheet.net/ datasheet pdf - http://www..co.kr/
cmos linear image sensors s10111 to s10114 series current-integration readout circuit example and timing chart kmpdc0385eb kmpdc0386ea 6 mst pld sensor clk reset cf c-v active video amp buffer data video clamp st int eos trigger mclk mst mclk st clk int reset clamp trigger data video eos readout circuit example timing chart www.datasheet.net/ datasheet pdf - http://www..co.kr/
cmos linear image sensors s10111 to s10114 series variable integration time function by controlling the clock pulse to the int terminal, the integration time for each pixel can be changed to any length that is an integer mul- tiple of one readout period. when the clock pulse at the int terminal is set to ?high? at the pixel signal readout timing, then no signal is output from that pixel (see below). this allows the signal charge to continuously accumulate in that pixel as long as no signal is output. for example, when the integration time of one readout period is 100 ms and this function is used to output a signal from a pixel on ce every 3 readout periods, then the integration time of that pixel will be 300 ms. using this function to lengthen the integration time o f certain pixels makes it possible to effectively detect spectral signals of weak wavelength components. kmpdc0233ec invalid data 1234 1234 1234 1234 1234 valid data clk st 1 ch integration time 2 ch integration time 3 ch integration time 4 ch integration time output readout timing int 7 timing chart (concept view showing the settings to double, triple and quadruple the integration times at channels 2, 3 and 4, respectively, by using the variable integration time function on the basis of the integration time at channel 1.) www.datasheet.net/ datasheet pdf - http://www..co.kr/
cmos linear image sensors s10111 to s10114 series dimensional outlines (unit: mm) s10111-128q, s10114-256q s10111-256q, s10114-512q kmpda0060ee kmpda0061ee 0.51 0.05 25.4 0.13 2.54 0.13 3.0 0.3 31.75 0.3 10.4 0.25 5.2 0.2 3.2 0.3 0.25 10.16 0.25 1.3 0.2 * 1 5.0 0.5 photosensitive surface index mark active area 6.4 2.5 1 ch 22 12 111 direction of scan * 1: distance from upper surface of quartz window to chip surface * 2: distance from photosensitive surface to bottom of package * 3: window thickness 1.4 0.2 * 2 0.5 0.05 * 3 0.51 0.05 25.4 0.13 2.54 0.13 3.0 0.3 active area 12.8 2.5 6.4 0.3 31.75 0.3 direction of scan 10.4 0.25 5.2 0.2 0.25 10.16 0.25 1.3 0.2 * 1 * 1: distance from upper surface of quartz window to chip surface * 2: distance from photosensitive surface to bottom of package * 3: window thickness 1.4 0.2 * 2 0.5 0.05 * 3 5.0 0.5 1 ch photosensitive surface index mark 22 12 111 8 www.datasheet.net/ datasheet pdf - http://www..co.kr/
cmos linear image sensors s10111 to s10114 series s10111-512q, s10114-1024q s10112-128q, S10113-256q 0.51 0.05 25.4 0.13 3.0 0.3 40.6 0.3 10.4 0.25 5.2 0.2 12.8 0.3 active area 25.6 2.5 0.25 10.16 0.25 1.3 0.2 * 1 2.54 0.13 1 ch 5.0 0.5 direction of scan * 1: distance from upper surface of quartz window to chip surface * 2: distance from photosensitive surface to bottom of package * 3: window thickness 1.4 0.2 * 2 0.5 0.05 * 3 photosensitive surface index mark 22 111 12 0.51 0.05 25.4 0.13 2.54 0.13 3.0 0.3 31.75 0.3 10.4 0.25 5.2 0.2 3.2 0.3 active area 6.4 0.5 0.25 10.16 0.25 1.3 0.2 * 1 1 ch 5.0 0.5 direction of scan * 1: distance from upper surface of quartz window to chip surface * 2: distance from photosensitive surface to bottom of package * 3: window thickness 1.4 0.2 * 2 0.5 0.05 * 3 photosensitive surface index mark 22 12 111 9 kmpda0062ee kmpda0215ee www.datasheet.net/ datasheet pdf - http://www..co.kr/
cmos linear image sensors s10111 to s10114 series s10112-256q, S10113-512q s10112-512q, S10113-1024q 0.51 0.05 25.4 0.13 2.54 0.13 3.0 0.3 active area 12.8 0.5 6.4 0.3 31.75 0.3 10.4 0.25 5.2 0.2 0.25 10.16 0.25 1.3 0.2 * 1 1 ch 5.0 0.5 direction of scan * 1: distance from upper surface of quartz window to chip surface * 2: distance from photosensitive surface to bottom of package * 3: window thickness 1.4 0.2 * 2 0.5 0.05 * 3 photosensitive surface index mark 22 12 111 0.51 0.05 25.4 0.13 3.0 0.3 40.6 0.3 10.4 0.25 5.2 0.2 12.8 0.3 active area 25.6 0.5 0.25 10.16 0.25 1.3 0.2 * 1 2.54 0.13 1 ch 5.0 0.5 direction of scan * 1: distance from upper surface of quartz window to chip surface * 2: distance from photosensitive surface to bottom of package * 3: window thickness 1.4 0.2 * 2 0.5 0.05 * 3 photosensitive surface index mark 22 111 12 10 kmpda0216ee kmpda0217ee www.datasheet.net/ datasheet pdf - http://www..co.kr/
cat. no. kmpd1090e07 oct. 2010 dn www.hamamatsu.com information furnished by hamamatsu is believed to be reliable. however, no responsibility is assumed for possible inaccuracies or omissions. specifications are subject to change without notice. no patent rights are granted to any of the circuits described herein. type numbers of products listed in the specification sheets or supplied as samples may have a suffix (x) which means tentativ e specifications or a suffix (z) which means developmental specifications. ?2010 hamamatsu photonics k.k. hamamatsu photonics k.k., solid state division 1126-1 ichino-cho, higashi-ku, hamamatsu city, 435-8558 japan, telephone: (81) 53-434-3311, fax: (81) 53-434-5184 u.s.a.: hamamatsu corporation: 360 foothill road, p.o.box 6910, bridgewater, n.j. 08807-0910, u.s.a., telephone: (1) 908-231-0 960, fax: (1) 908-231-1218 germany: hamamatsu photonics deutschland gmbh: arzbergerstr. 10, d-82211 herrsching am ammersee, germany, telephone: (49) 8152- 375-0, fax: (49) 8152-265-8 france: hamamatsu photonics france s.a.r.l.: 19, rue du saule trapu, parc du moulin de massy, 91882 massy cedex, france, teleph one: 33-(1) 69 53 71 00, fax: 33-(1) 69 53 71 10 united kingdom: hamamatsu photonics uk limited: 2 howard court, 10 tewin road, welwyn garden city, hertfordshire al7 1bw, unit ed kingdom, telephone: (44) 1707-294888, fax: (44) 1707-325777 north europe: hamamatsu photonics norden ab: smidesv?gen 12, se-171 41 solna, sweden, telephone: (46) 8-509-031-00, fax: (46) 8 -509-031-01 italy: hamamatsu photonics italia s.r.l.: strada della moia, 1 int. 6, 20020 arese, (milano), italy, telephone: (39) 02-935-81- 733, fax: (39) 02-935-81-741 cmos linear image sensors s10111 to s10114 series pin connection kmpdc0230ec pin no. symbol name of pin i/o 1 st start pulse input 2 int integration time control pulse input 3vofg over ow gate voltage input 4 vdd supply voltage input 5 gnd ground input 6 gnd ground input 7 vdd supply voltage input 8 vofd over ow drain voltage input 9 active video video output output 10 dummy video dummy video output output 11 gnd ground input 12 eos end of scan output 13 nc no connection 14 nc 15 nc 16 nc 17 nc 18 nc 19 nc 20 nc 21 nc 22 clk clock pulse input precautions during use (1) electrostatic countermeasures this device has a built-in protection circuit against static electrical charges. however, to prevent destroying the device with electrostatic charges, take countermeasures such as grounding yourself, the workbench and tools to prevent static discharges. also protect th is de- vice from surge voltages which might be caused by peripheral equipment. (2) incident window if dust or dirt gets on the light incident window, it will show up as black blemishes on the image. when cleaning, avoid rubbin g the window surface with dry cloth or dry cotton swab, since doing so may generate static electricity. use soft cloth, paper or a co tton swab moistened with alcohol to wipe dust and dirt off the window surface. then blow compressed air onto the window surface so that n o spot or stain remains. (3) soldering to prevent damaging the device during soldering, take precautions to prevent excessive soldering temperatures and times. solder ing should be performed within 5 seconds at a soldering temperature below 260 c. 11 clk nc nc nc nc nc nc nc nc nc eos 1 2 3 4 5 6 7 8 9 10 11 22 21 20 19 18 17 16 15 14 13 12 st int vofg vdd gnd gnd vdd vofd active video dummy video gnd index mark www.datasheet.net/ datasheet pdf - http://www..co.kr/

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